A Compact Model for an IC Lateral Diffused MOSFET Using the Lumped-Charge Methodology
نویسندگان
چکیده
A compact model for an IC Lateral Diffused MOSFET is developed using the Lumped-Charge Methodology[1]. Model equations and key performance characteristics are documented. They satisfy the requirements of Power MOSFET models[2], unlike the competitive macromodels developed from short-channel, low-power MOSFET models.
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